leshan radio company, ltd. v0 d l 7 4 vhc1g01 v0 d 1 3 2 4 5 tsop?5/sot?23/sc?59 dt suffix the l 74vhc1g01 is an advanced high speed cmos 2?input nand gate with an open drain output fabricated with silicon gate cmos technology. it achieves high speed peration similar to equivalent bipolar schottky ttl while maintaining cmos low power di ssipation. the internal circuit is composed of three stages, including an open drain output which provides the ability to set outpu t switching level. this allows the l 74vhc1g01 to be used to interface 5 v circuits to circuits of any voltage between v cc and 7 v using an external resistor and power supply. the l 74vhc1g01 input structure provides protection when voltages up to 7 v are applied, regardless of the supply volta ge. high speed: t pd = 3.7 ns (typ) at v cc = 5 v low internal power dissipation: i cc = 2 ma (max) at t a = 25c power down protection provided on inputs pin and function compatible with other standard logic families chip complexity: fets = 62; equivalent gates = 16 sc?88a / sot?353/sc?70 df suffix 1 3 2 4 5 marking diagrams pin 1 d = date code pin 1 d = date code figure 1. pinout (top view) figure 2. logic symbol pin assignment 1 in b 2 in a 3 gnd 4 out y 5v cc function table inputs ou tput ab y ll z lh z hl z hh l ordering information see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 2?input nand gate with open drain output 1/6
leshan radio company, ltd. l 74vhc1g00 maximum ratings symbol parameter value unit v cc dc supply voltage ? 0.5 to + 7.0 v v in dc input voltage ? 0.5 to 7.0 v v out dc output voltage ? 0.5 to 7.0 v i ik dc input diode current ?20 ma i ok dc output diode current v out < gnd; v out > v cc +20 ma i out dc output sink current + 25 ma i cc dc supply current per supply pin +50 ma p d power dissipation in still air sc?88a, tsop?5 200 mw ja thermal resistance sc?88a, tsop?5 333 c/w t l lead temperature, 1 mm from case for 10 seconds 260 c t j junction temperature under bias + 150 c t stg storage temperature ?65 to +150 c v esd esd withstand voltage human body model (note 2) >2000 v machine model (note 3) > 200 charged device model (note 4) n/a i latch?up latch?up performance above v cc and below gnd at 125c (note 5) 500 ma 1. maximum ratings are those values beyond which damage to the device may occur. exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. functional operation under absolute?maximum?rated conditions is not implied. functional operation should be restricted to the recommended operating conditions. 2. tested to eia/jesd22?a114?a 3. tested to eia/jesd22?a115?a 4. tested to jesd22?c101?a 5. tested to eia/jesd78 recommended operating conditions symbol parameter min max unit v cc dc supply voltage 2.0 5.5 v v in dc input voltage 0.0 5.5 v v out dc output voltage 0.0 7.0 v t a operating temperature range ? 55 + 125 c t r ,t f input rise and fall time v cc = 3.3 0.3 v 0 100 ns/v v cc = 5.0 0.5 v 0 20 device junction temperature versus time to 0.1% bond failures junction t ime, time, temperature c hours y ears 80 1,032,200 117.8 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 normalized failure rate figure 3. failure rate vs. time junction temperature 1 1 10 100 1000 time, years 2/6
leshan radio company, ltd. dc electrical characteristics v cc t a = 25 c t a < 85 c ?55 c to 125 c symbol parameter test conditions (v) min typ max min max min max unit v ih minimum high?level 2.0 1.5 1.5 1.5 v input voltage 3.0 2.1 2.1 2.1 4.5 3.15 3.15 3.15 5.5 3.85 3.85 3.85 v il maximum low?level 2.0 0.5 0.5 0.5 v input voltage 3.0 0.9 0.9 0.9 4.5 1.35 1.35 1.35 5.5 1.65 1.65 1.65 v oh minimum high?level v in = v ih or v il 2.0 1.9 2.0 1.9 1.9 v output voltage i oh = ? 50 a 3.0 2.9 3.0 2.9 2.9 v in = v ih or v il 4.5 4.4 4.0 4.4 4.4 v in = v ih or v il i oh = ?4 ma 3.0 2.58 2.48 2.34 i oh = ?8 ma 4.5 3.94 3.80 3.66 v ol maximum low?level v in = v ih or v il 2.0 0.0 0.1 0.1 0.1 v output voltage i ol = 50 a 3.0 0.0 0.1 0.1 0.1 v in = v ih or v il 4.5 0.0 0.1 0.1 0.1 v in = v ih or v il i ol = 4 ma 3.0 0.36 0.44 0.52 i ol = 8 ma 4.5 0.36 0.44 0.52 i in maximum input v in = 5.5 v or gnd 0 to5.5 0.1 1.0 1.0 a leakage current i cc maximum quiescent v in = v cc or gnd 5.5 2.0 20 40 a supply current i opd maximum off?state v out = 5.5 v 0 0.25 2.5 5.0 a leakage current l 74vhc1g01 ac electrical characteristics c load = 50 pf, input t r = t f = 3.0 ns t a = 25 c t a < 85 c 55 c to 125 c symbol parameter test conditions min typ max min max min max unit t pzl maximum output v cc = 3.3 0.3 v c l = 15 pf 5.5 7.9 9.5 11.0 ns enable time, r l = r i = 500 ? c l = 50 pf 8.0 11.4 13.0 15.5 input a or b to y v cc = 5.0 0.5 v c l = 15 pf 3.7 5.5 6.5 8.0 r l = r i = 500 ? c l = 50 pf 5.2 7.5 8.5 8.0 t plz maximum output v cc = 3.3 0.3 v c l = 50 pf 8.0 11.4 13.0 15.5 ns disable time r l = r i = 500 ? v cc = 5.0 0.5 v c l = 50 pf 5.2 7.5 8.5 10.0 r l = r i = 500 ? c in maximum input 4 10 10 10 pf capacitance typical @ 25c, v cc = 5.0 v c pd power dissipation capacitance (note 6) 18 pf 6. c pd is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption witho ut load. average operating current can be obtained by the equation: i cc(opr) = c pd x v cc x f in + i cc . c pd is used to determine the no? load dynamic power consumption; p d = c pd x v cc 2 x f in + i cc x v cc . 3/6
leshan radio company, ltd. l 74vhc1g01 device ordering information device nomenclature device order number logic circuit indicator temp range identifier technology device function package suffix tape and reel suffix package type (name/sot#/ common name) tape and reel size l 74vhc1g01dft1 l 7 4 v hc1g 0 1 d f t 1 s c?70/sc?88a/ 1 78 mm (7 in) sot?353 3000 unit l 74vhc1g01dft 2 l 7 4 v hc1g 0 1 d f t 2 s c?70/sc?88a/ 1 78 mm (7 in) sot?353 3000 unit l 74vhc1g01dft 4 l 7 4 v hc1g 0 1 d f t 4 s c?70/sc?88a/ 3 30 mm (13 in) sot?353 10,000 unit l 74vhc1g01dtt1 l 7 4 v hc1g 0 1 d t t 1 s ot?23/tsops/ 1 78 mm (7 in) sc?59 3000 unit l 74vhc1g01dtt 3 l 7 4 v hc1g 0 1 d t t 3 s ot?23/tsops/ 3 30 mm (13 in) sc?59 10,000 unit figure 5. switching waveforms figure 4. output voltage mismatch application c l = 50 pf equivalent (includes jig and probe capacitance) r l = r 1 = 500 ? or equivalent r t = z out of pulse generator (typically 50 ? ) figure 6. test circuit figure 7. complex boolean functions figure 8. led driver figure 9. gtl driver 4/6
leshan radio company, ltd. l 74 v hc1g0 1 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419a?01 obsolete. new standard 419a?02. 4. dimensions a and b do not include mold flash, protrusions, or gate burrs. dim a min max min max millimeters 1.80 2.20 0.071 0.087 inches b 1.15 1.35 0.045 0.053 c 0.80 1.10 0.031 0.043 d 0.10 0.30 0.004 0.012 g 0.65 bsc 0.026 bsc h --- 0.10 --- 0.004 j 0.10 0.25 0.004 0.010 k 0.10 0.30 0.004 0.012 n 0.20 ref 0.008 ref s 2.00 2.20 0.079 0.087 b 0.2 (0.008) mm 12 3 4 5 a g s d 5 pl h c n j k ?b? sc70?5/sc?88a/sot?353 df suffix soldering footprint* mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 5/6
leshan radio company, ltd. l 74 v hc1g0 1 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. a and b dimensions do not include mold flash, protrusions, or gate burrs. dim min max min max inches millimeters a 2.90 3.10 0.1142 0.1220 b 1.30 1.70 0.0512 0.0669 c 0.90 1.10 0.0354 0.0433 d 0.25 0.50 0.0098 0.0197 g 0.85 1.05 0.0335 0.0413 h 0.013 0.100 0.0005 0.0040 j 0.10 0.26 0.0040 0.0102 k 0.20 0.60 0.0079 0.0236 l 1.25 1.55 0.0493 0.0610 m 0 10 0 10 s 2.50 3.00 0.0985 0.1181 0.05 (0.002) 123 54 s a g l b d h c k m j __ _ _ sot23?5/tsop?5/sc59?5 dt suffix 0.7 0.028 1.0 0.039 mm inches scale 10:1 0.95 0.037 2.4 0.094 1.9 0.074 soldering footprint* 6/6
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